Central Library, Indian Institute of Technology Delhi
केंद्रीय पुस्तकालय, भारतीय प्रौद्योगिकी संस्थान दिल्ली

An introduction to time-of-flight secondary ion mass spectrometry (ToF-SIMS) and its application to materials science / Sarah Fearn.

By: Fearn, Sarah [author.]Contributor(s): Morgan & Claypool Publishers [publisher.] | Institute of Physics (Great Britain) [publisher.]Material type: TextTextSeries: IOP (Series). Release 2. | IOP concise physicsPublisher: San Rafael [California] (40 Oak Drive, San Rafael, CA, 94903, USA) : Morgan & Claypool Publishers, [2015]Distributor: Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2015]Description: 1 online resource (various pagings) : illustrations (some color)Content type: text Media type: electronic Carrier type: online resourceISBN: 9781681740881; 9781681742168Subject(s): Secondary ion mass spectrometry | Time-of-flight mass spectrometry | Materials science | Microscopy | TECHNOLOGY & ENGINEERING / MeasurementAdditional physical formats: Print version:: No titleDDC classification: 543/.65 LOC classification: QD96.S43 | F435 2015ebOnline resources: Click here to access online Also available in print.
Contents:
Preface -- Author biography -- 1. Introduction -- 1.1. Overview -- 1.2. Basic principles
2. Practical requirements -- 2.1. Ion generation -- 2.2. Primary and sputter ion beam sources -- 2.3. Mass analysis -- 2.4. Ion detection -- 2.5. Ultra high vacuum
3. Modes of analysis -- 3.1. High-resolution mass spectra -- 3.2. Depth profiling
4. Ion beam-target interactions -- 4.1. Ion beam induced atomic mixing -- 4.2. Beam induced surface roughening and uneven etching -- 4.3. Beam induced segregation -- 4.4. Other beam induced effects -- 4.5. Depth profiling with cluster ion beams
5. Application to materials science -- 5.1. Biomaterials and tissue studies -- 5.2. Glass corrosion -- 5.3. Ceramic oxides -- 5.4. Semiconductor analysis -- 5.5. Organic electronics -- 6. Summary.
Abstract: This book highlights the application of Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) for high-resolution surface analysis and characterization of materials. While providing a brief overview of the principles of SIMS, it also provides examples of how dual-beam ToF-SIMS is used to investigate a range of materials systems and properties. Over the years, SIMS instrumentation has dramatically changed since the earliest secondary ion mass spectrometers were first developed. Instruments were once dedicated to either the depth profiling of materials using high-ion-beam currents to analyse near surface to bulk regions of materials (dynamic SIMS), or time-of-flight instruments that produced complex mass spectra of the very outer-most surface of samples, using very low-beam currents (static SIMS). Now, with the development of dual-beam instruments these two very distinct fields now overlap.
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"Version: 20151001"--Title page verso.

"A Morgan & Claypool publication as part of IOP Concise Physics"--Title page verso.

Includes bibliographical references.

Preface -- Author biography -- 1. Introduction -- 1.1. Overview -- 1.2. Basic principles

2. Practical requirements -- 2.1. Ion generation -- 2.2. Primary and sputter ion beam sources -- 2.3. Mass analysis -- 2.4. Ion detection -- 2.5. Ultra high vacuum

3. Modes of analysis -- 3.1. High-resolution mass spectra -- 3.2. Depth profiling

4. Ion beam-target interactions -- 4.1. Ion beam induced atomic mixing -- 4.2. Beam induced surface roughening and uneven etching -- 4.3. Beam induced segregation -- 4.4. Other beam induced effects -- 4.5. Depth profiling with cluster ion beams

5. Application to materials science -- 5.1. Biomaterials and tissue studies -- 5.2. Glass corrosion -- 5.3. Ceramic oxides -- 5.4. Semiconductor analysis -- 5.5. Organic electronics -- 6. Summary.

This book highlights the application of Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) for high-resolution surface analysis and characterization of materials. While providing a brief overview of the principles of SIMS, it also provides examples of how dual-beam ToF-SIMS is used to investigate a range of materials systems and properties. Over the years, SIMS instrumentation has dramatically changed since the earliest secondary ion mass spectrometers were first developed. Instruments were once dedicated to either the depth profiling of materials using high-ion-beam currents to analyse near surface to bulk regions of materials (dynamic SIMS), or time-of-flight instruments that produced complex mass spectra of the very outer-most surface of samples, using very low-beam currents (static SIMS). Now, with the development of dual-beam instruments these two very distinct fields now overlap.

Materials scientists, researchers and engineers.

Also available in print.

Mode of access: World Wide Web.

System requirements: Adobe Acrobat Reader.

Dr. Sarah Fearn is a Research Officer, Surface Analysis in the Materials Department at Imperial College London, where she conducts near-surface analysis of SOFCs and ionic conductivity measurements on nano-engineered structures. Her current research techniques include: isotope exchange, secondary ion mass spectrometry (SIMS), focused ion beam (FIB) microscopy, and low-energy ion scattering (LEIS). She received her PhD in 1999 from Imperial College London and spent nearly two years as a commercial SIMS analyst with Cascade Scientific before joining ICL in 2002.

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